Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

ZnO-based nanostructures for diluted magnetic semiconductor

Since the prediction by Dietl et al. in the year 2000, extensive research activities have been focused on the ZnObased diluted magnetic materials (DMSs). Earlier works were mainly performed using bulk or thin film materials with transition-metal doping, and diverse magnetic properties including ferromagnetism, paramagnetism, and diamagnetism have been reported. Identifying the dominant mechanis...

متن کامل

Ni doped ZnO thin films for diluted magnetic semiconductor materials

Ni doped ZnO (Zn1 xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1 xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminesc...

متن کامل

The semiconductor-to-ferromagnetic-metal transition in FeSb2

We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog of FeSi. We find that despite different compositions and crystal structures, in the local density approximation with on-site Coulomb repulsion correction (LDA+U) method magnetic and semiconducting solutions for U=2.6 eV are energetically degenerate similar to the case of FeSi. For both FeSb2 and FeSi (F...

متن کامل

Magnetic Impurity States and Ferromagnetic Interaction in Diluted Magnetic Semiconductors

The electronic structure of diluted magnetic semiconductors is studied, especially focusing on the hole character. The Haldane-Anderson model is extend to a magnetic impurity, and is analyzed in the Hartree-Fock approximation. Due to the strong hybridization of an impurity d-states with host p-states, it is shown that holes are created in the valence band, at the same time the localized magneti...

متن کامل

About Ge(Mn) diluted magnetic semiconductor

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscop...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Vacuum

سال: 2009

ISSN: 0042-207X

DOI: 10.1016/j.vacuum.2009.01.030